DESCRIPTION

Lowest dielectric constants for fast electronics. On the leading edge of aerogel-dielectric technology

We have developed processes to seal, pattern, and metallize both bulk and thin-film aerogels. We have made and characterized thin-film aerogels 1 to 10 µm thick and can seal the aerogels from subsequent semiconductor process liquids so that conventional photoresist techniques can be used. We have patterned aerogels with plasma-etching techniques and sputtered thin (<0.5 µm) metal layers onto the aerogel surfaces and electroplated thicker (>1.0 µm) layers. We have patterned metal conductors on top of thin-film aerogels on silicon substrate.

Inexpensive, rapid processing

Silicon thin-film aerogels are made using a patented process involving a silica solution (with the consistency of oil) to which water, a solvent, and a basic catalyst are added to form a gel. The ungelled solution is spun onto a silicon wafer in a manner similar to that used to spin on conventional photoresists in semiconductor processing. The silicon can be dipped into the solution or the solution can be allowed to fill the space between substrates. The gels are dried through supercritical
extraction of the solvent. The resulting layers can be made in thicknesses of 1 to 100 µm. Our laboratory-scale process takes hours; other processes can take days.

STATUS: We are seeking industrial partners to collaborate on developing the aerogels for microelectronics and related technologies. 

CONTACT

Annemarie Meike,  Ph.D
Industrial Partnerships and Commercialization, L-795
P.O. Box 808
Lawrence Livermore National Laboratory
Livermore, CA 94551-0808
Phone: 925 422 3735
Fax: 925 423 8988
E-mail : meike1@llnl.gov

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