DESCRIPTION

This case describes formation of self-assembled monolayer in micron and sub-micron scale patterns on a surface, not by application from a stamp having a contoured surface (as described in Harvard Case No. 966), but by application of a self-assembled monolayer onto protrusions of a contoured surface from an applicator that can have a smooth, non-contoured surface. Also described and claimed are techniques for applying a chemical vapor deposition blocking agent from any applicator to a surface, followed by exposure of the surface to chemical vapor deposition conditions to pattern CVD material. One use for this technique involves depositing metal conductors within channels in a surface. For example, the top and bottom surfaces of a chip substrate, which contains holes passing through the substrate, can be coated with a CVD blocking agent from an applicator. Exposure to CVD conditions results in deposition of material selectively within the holes. Removal of the blocking agent results in conductive material in the holes, providing electrical connection between the top and bottom surfaces, without conductive material on the top and bottom surfaces themselves. Additionally described is a technique of depositing a metal oxide onto a surface from a sol-gel precursor solution to form a very small-dimensioned pattern of metal oxide on a surface

STATUS: Patent Application
A meeting can be arranged with inventors to discuss the status

CONTACT

Harvard University
Katherine Chou
Phone: (617) 495-3067 
Fax: (617) 495-9568
Email: Katherine_Chou@harvard.edu 

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